CHA3667A rohs compliant ref. : dsCHA3667A0158 - 07 jun 10 1/8 specification s subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - b.p.46 - 91401 orsay cede x france tel. : +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 7-20ghz medium power amplifier gaas monolithic microwave ic description the CHA3667A is a wide band monolithic medium power amplifier. it is designed for a wide range of applications, from military to commercial communication systems. the circuit is manufactured with a power phemt process, 0.15m gate length, via hole through the substrate. it is esd protected on rf ports thanks to dc specific filter circuits. it is supplied in chip form. main features broadband performance 7-20ghz self biased 23db gain @ 2.7db noise figure 20 dbm output power at 1db compression dc power consumption, 175ma @ 4.2v chip size : 2,45 x 1,21 x 0,1mm vd rfin rfout vd rfin rfout on wafer typical measurements -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 frequency ( ghz) gain & return losses (db) s21 s11 s22 main characteristics tamb = +25c symbol parameter min typ max unit fop input frequency range 7 20 ghz g small signal gain 23 db nf noise figure 2.7 3.5 db p-1db output power at 1db gain compression 21 23 d bm id bias current 130 175 220 ma esd protections : electrostatic discharge sensitive device observe handling precautions !
CHA3667A 7-20ghz amplifier ref. : dsCHA3667A0158 - 07 jun 10 2/8 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 electrical characteristics tamb = +25c, vd = +4v symbol parameter min typ max unit fop operating frequency range 7 20 ghz g gain (7-8ghz) (8-20ghz) 19 21 21 23 db db nf noise figure (7-18 ghz) 2.7 3.5 db rlin input return loss -10 -8 db rlout output return loss -10 -8 db ip3 output ip3 28 dbm p1db pout at 1db gain compression: (7-14ghz) (14-20ghz) 20 21 dbm dbm isol reverse isolation 45 db vd drain bias voltage 4.2 v id drain bias current 130 175 220 ma these values are representative for on wafer measur ements that are made without bonding wires at the rf ports. absolute maximum ratings (1) tamb = +25c symbol parameter (1) values unit vd drain bias voltage 4.5 v id drain bias current 240 ma pin rf input power (2) 3 dbm tch maximum chanel temperature +175 c ta operating temperature range -40 to +85 c tstg storage temperature range -55 to +125 c (1) operation of this device above anyone of these paramaters may cause permanent damage. (2) duration<1s
7-20ghz amplifier CHA3667A ref. : dsCHA3667A0158 - 07 jun 10 3/8 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical chip on wafer sij parameters tamb.=+25c, vd1=+4.2v, id=175ma
CHA3667A 7-20ghz amplifier ref. : dsCHA3667A0158 - 07 jun 10 4/8 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical measured performance on wafer measurement (without bonding wires at the rf ports) tamb.=+25c, vd=+4.2v id=175ma gain & return losses versus frequency -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 0 2 4 6 8 10 12 14 16 18 20 22 24 26 frequency ( ghz) gain & return losses (db) s21 s11 s22 noise figure versus frequency 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 6 8 10 12 14 16 18 20 frequency ( ghz) nf (db)
7-20ghz amplifier CHA3667A ref. : dsCHA3667A0158 - 07 jun 10 5/8 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 output power @1db compression versus frequency 0 2 4 6 8 10 12 14 16 18 20 22 24 26 6 8 10 12 14 16 18 20 freq ( ghz) pout @1db compression (dbm) pout, gain & id versus pin @ 7ghz 0 2 4 6 8 10 12 14 16 18 20 22 24 26 -20 -15 -10 -5 0 pin (db) pout (dbm) & gain (db) 170 190 210 230 250 270 290 id (ma)
CHA3667A 7-20ghz amplifier ref. : dsCHA3667A0158 - 07 jun 10 6/8 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 pout, gain & id versus pin @ 16ghz 0 2 4 6 8 10 12 14 16 18 20 22 24 26 -20 -15 -10 -5 0 pin (db) pout( dbm) & gain (db) 170 190 210 230 250 270 290 id (ma) pout, gain & id versus pin @ 20ghz 0 2 4 6 8 10 12 14 16 18 20 22 24 26 -20 -15 -10 -5 0 pin (db) pout( dbm) & gain (db) 170 190 210 230 250 270 290 id (ma)
7-20ghz amplifier CHA3667A ref. : dsCHA3667A0158 - 07 jun 10 7/8 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 bonding pad position chip assembly and mechanical data note : 25 m diameter gold wire is to be prefered. dc pad size: 86 / 83 m rf pad size: 105/171m rf wire bondings should be as short as possible, lo wer than 0.35mm. chip thickness: 100 m .10m 10nf 120pf dc drain supply feed 10nf 120pf 10nf 120pf 10nf 120pf
CHA3667A 7-20ghz amplifier ref. : dsCHA3667A0158 - 07 jun 10 8/8 specification s subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 notes due to esd protection circuits on rf input and outp ut, an external capacitance might be requested to isolate the product from external volt age that could be present on the rf accesses. vd rfin rfout vd rfin rfout due to bcb coating on the chip, qualification domai n implies the chip must be glued. ordering information chip form : CHA3667A98f/00 information furnished is believed to be accurate an d reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by impli cation or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and re places all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or s ystems without express written approval from united monolithic semiconductors s.a.s.
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